Description
The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.
Features
- 0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
240
200
160
0.5 -75 -50 -25 0
25 50 75 100 125 150
TJ , Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP 1.45A
1.8A BOTTOM 13A
120
80
40
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0 25
50 75 100 125 150 Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
IRF6633APbF
L VCC
DUT
0
1K
Vds Vgs(th)
Id Vgs
Fig 15a. Gate Charge Test C.
IRF6633ATRPbF Datasheet
