Datasheet Details
| Part number | IRF6633APbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 259.56 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6633APbF Datasheet
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General Description
The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.
Key Features
- 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 240 200 160 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.45A 1.8A BOTTOM 13A 120 80 40 www. irf. com 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 14. Maximum Avalanche Energy Vs. Drain Current 5 IRF6633APbF L VCC DUT 0 1K Vds Vgs(th) Id Vgs Fig 15a. Gate Charge Test C.