IRF6633 Description
The IRF6633 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application...
IRF6633 Key Features
- RoHs pliant Containing No Lead and Bromide
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching
- Ideal for CPU Core DC-DC Converters
- Optimized for both Sync.FET and some Control FET application
- Low Conduction and Switching Losses