IRF6633 Datasheet | International Rectifier

- 96989B IRF6633 l Ro Hs pliant Containing No Lead and Bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling patible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l patible with existing Surface Mount Techniques  Direct FET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS RDS(on) RDS(on) 20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11n C 4.0n C 1.2n C 32n C 8.8n C 1.8V Direct FET™ ISOMETRIC Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6633 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6633 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6633 has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize...