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IRF6633PBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 97083 DirectFET™ Power MOSFET ‚ RoHS pliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling patible  l patible with existing Surface Mount Techniques  l IRF6633PbF IRF6633TRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS VGS 20V max ±20V max 4.1mΩ @ 10V 7.0mΩ @ 4.5V Qg tot Qgd 4.0nC Qgs2 1.2nC Qrr 32nC Qoss 8.8nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6633PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • ltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 200 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 5.7A 8.7A BOTTOM 13A TOP EAS, Single Pulse Avalanche Energy (mJ) 160 120 80 40 0 25 50 75 100 125.

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