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IRF6636 - DirectFET Power MOSFET

Datasheet Summary

Description

The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 120 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature.

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PD - 96977B www.DataSheet4U.com IRF6636 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 20V max ±20V max 3.2mΩ@ 10V 4.6mΩ@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 18nC 6.1nC 1.9nC 7.3nC 10nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for Control FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques ST Applicable DirectFET Outline and Substrate Outline (see p.
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