Description
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile.
Features
- = 150°C Single Pulse 0.0 0.1 1.0 10 100
0.1 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60 50
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 50µA 1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typ.
IRF6631 Datasheet
