IRF6631 Datasheet | International Rectifier

- 97183 .. RDS(on) Qoss 7.3n C Direct FET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l l Ro HS pliant containing no lead or bromide  Low Profile (<0.6 mm) Dual Sided Cooling patible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET applications  Low Conduction and Switching Losses patible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 4.4n C RDS(on) Qgs2 1.1n C 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Qrr 10n C Vgs(th) 1.8V 12n C Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Direct FET™ ISOMETRIC Description The IRF6631 bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6631 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6631 has been optimized for parameters that are critical in synchronous buck including Rds(on) and gate charge to minimize losses in the control FET...