Datasheet Details
| Part number | IRF6631 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 265.98 KB |
| Description | DirectFET Power MOSFET |
| Datasheet |
 IRF6631 Datasheet
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General Description
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile.
Key Features
- = 150°C Single Pulse 0.0 0.1 1.0 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typ.