IRF6635 Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6635 Features

* 200 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Ma

IRF6635 General Description

The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in.

IRF6635 Datasheet (270.54 KB)

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IRF6635

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International Rectifier

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270.54 KB

Description:

Directfet power mosfet.
PD - 96981B www.DataSheet4U.com IRF6635 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHs compliant containing no lead or br.

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IRF6635 DirectFET Power MOSFET International Rectifier

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IRF6635 Features

IRF6635 General Description

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