Description
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- rward Voltage
200
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA
175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C)
ID, Drain Current (A)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
800 700 600 500 400 300 200 100 0 25 50 75
ID 9.1A 11A B.
IRF6635TRPbF Datasheet
