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IRF6635 - DirectFET Power MOSFET

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General Description

The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD - 96981B www.DataSheet4U.com IRF6635 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHs compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 47nC 17nC 4.7nC 48nC 29nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for SyncFET socket of Sync.

Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques MX Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • 200 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 800 700 600 500 400 300 200 100 0 25 50 75 ID TOP 9.1A 11A BOTTOM 2.

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