Datasheet Summary
- 95172
HEXFET® Power MOSFET l l l .. l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
1 2 3 4
8 7
A D D D D
VDSS = -14V RDS(on) = 0.012Ω
6 5
Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications....