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IRF7307QPBF - Power MOSFET

Description

achieve extremely low on-resistance per silicon area.

Features

  • of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

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Full PDF Text Transcription

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IRF7307QPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dual N and P Channel MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch l Surface Mount G1 2 7 D1 l Available in Tape & Reel l 150°C Operating Temperature S2 3 6 D2 VDSS 20V -20V l Lead-Free G2 4 5 D2 P-CHANNEL MOSFET Description Top View RDS(on) 0.050Ω 0.090Ω These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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