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IRF7307QPBF - Power MOSFET

General Description

achieve extremely low on-resistance per silicon area.

Key Features

  • of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7307 Power MOSFET
IRF7307PbF Power MOSFET
IRF7301 Power MOSFET
IRF7301PBF HEXFET Power MOSFET
IRF7303 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF7307QPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l Dual N and P Channel MOSFET N-CHANNEL MOSFET S1 1 8 D1 N-Ch P-Ch l Surface Mount G1 2 7 D1 l Available in Tape & Reel l 150°C Operating Temperature S2 3 6 D2 VDSS 20V -20V l Lead-Free G2 4 5 D2 P-CHANNEL MOSFET Description Top View RDS(on) 0.050Ω 0.090Ω These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.