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International Rectifier Electronic Components Datasheet

IRF7307QPBF Datasheet

Power MOSFET

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IRF7307QPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
l Surface Mount
G1 2
7 D1
l Available in Tape & Reel
l 150°C Operating Temperature
S2 3
6 D2
VDSS
20V
-20V
l Lead-Free
G2 4
5 D2
P-CHANNEL MOSFET
Description
Top View
RDS(on) 0.050Ω 0.090Ω
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability
making it ideal in a variety of power applications. This
SO-8
dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Base Part Number
IRF7307QPbF
IRF7307QPbF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7307QPbF
IRF7307QTRPbF
EOL Notice
EOL 529
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
10 Sec. Pulse Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient„
Max.
N-Channel
P-Channel
5.7
5.2
4.1
21
2.0
0.016
± 12
5.0
-55 to + 150
-4.7
-4.3
-3.4
-17
-5.0
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
September 3, 2014


International Rectifier Electronic Components Datasheet

IRF7307QPBF Datasheet

Power MOSFET

No Preview Available !

IRF7307QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
N-Ch 20 — —
P-Ch -20 — —
V
N-Ch
P-Ch
— 0.044 —
— -0.012 —
V/°C
N-Ch
P-Ch
—
—
—
—
— 0.050
— 0.070
— 0.090
— 0.140
Ω
N-Ch 0.70 — —
P-Ch -0.70 — —
V
N-Ch 8.30 — —
P-Ch 4.00 — —
S
N-Ch — — 1.0
P-Ch —
N-Ch —
—
—
-1.0
25
µA
P-Ch — — -25
N-P –– — ±100
N-Ch — — 20
P-Ch — — 22
N-Ch —
P-Ch —
—
—
2.2
3.3
nC
N-Ch — — 8.0
P-Ch — — 9.0
N-Ch — 9.0 —
P-Ch — 8.4 —
N-Ch — 42 —
P-Ch —
N-Ch —
26
32
—
—
ns
P-Ch — 51 —
N-Ch — 51 —
P-Ch — 33 —
N-P —
N-P —
4.0
6.0
—
—
nH
N-Ch — 660 —
P-Ch — 610 —
N-Ch — 280 —
P-Ch — 310 —
pF
N-Ch — 140 —
P-Ch — 170 —
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.6A ƒ
VGS = 2.7V, ID = 2.2A ƒ
VGS = -4.5V, ID = -2.2A ƒ
VGS = -2.7V, ID = -1.8A ƒ
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.6A ƒ
VDS = -15V, ID = -2.2A ƒ
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V,
VDS = 16V, VGS = 0V, TJ = 125°C
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
ID = 2.6A, VDS = 16V, VGS = 4.5V
ƒ
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
Between lead tip
and center of die contact
ƒ
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
ƒ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 2.5
IS
Continuous Source Current (Body Diode)
P-Ch — — -2.5 A
N-Ch — — 21
ISM
Pulsed Source Current (Body Diode) 
P-Ch — — -17
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
N-Ch —
P-Ch —
— 1.0 V
— -1.0
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
N-Ch — 29 44 ns N-Channel
P-Ch — 56 84
TJ = 25°C, IF = 2.6A, di/dt = 100A/µs
N-Ch —
P-Ch —
22
71
33
110
nC
P-Channel
TJ = 25°C, IF = -2.2A, di/dt = 100A/µs
ƒ
N-P Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
‚ N-Channel ISD 2.6A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C
P-Channel ISD -2.2A, di/dt 50A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
September 3, 2014


Part Number IRF7307QPBF
Description Power MOSFET
Maker International Rectifier
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