Datasheet Summary
- 9.1238C
HEXFET® Power MOSFET l l l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
S1 G1 S2 G2
8 7
D1 D1 D2 D2
VDSS = 20V RDS(on) = 0.050Ω
T o p V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The...