IRF730 Datasheet | Advanced Power Electronics Corp

Description APEC MOSFET provide the power designer with the best bination of fast switching , lower on-resistance and reasonable cost. G DS The TO-220 and package is universally preferred for all mercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice Rating 400 ±20 5.5 3.5 22 74 0.59 152 5.5 -55 to 150 -55 to 150 Units V V A A A W W/℃ m J A ℃ ℃ Max. Max. Value 1.7 62 Unit ℃/W ℃/W 200420071-1/4 Electrical Characteristics@Tj=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25o C) Drain-Source Leakage Current (Tj=125o C) Gate-Source Leakage Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS=0V, ID=1m A VGS=10V,...