Part IRF730
Description N-Channel Power MOSFET
Category MOSFET
Manufacturer STMicroelectronics
Size 254.98 KB
STMicroelectronics
IRF730

Overview

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge t(s) Description c The PowerMESH™II is the evolution of the first u generation of MESH OVERLAY™. The layout d refinements introduced greatly improve the ro Ron*area figure of merit while keeping the device P at the leading edge for what concerns swithing te speed, gate charge and ruggedness. ole Applications bs
  • Switching application 3 2 1 TO-220 Internal schematic diagram te Product(s) - O Order codes olePart number Obs IRF730 Marking IRF730 Package TO-220 Packaging Tube June 2006 Rev 4 1/12 12 Contents Contents IRF730 1 2 3 4 5 Obsolete Product(s) - Obsolete Product(s) 2/12 IRF730 1 Electrical ratings Electrical ratings Table
  • Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 400 V VDGR Drain-gate voltage (RGS = 20 kΩ) 400 V VGS Gate- source voltage ± 20 V ID Drain current (continuos) at TC = 25°C