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IRF730 - N-Channel Power MOSFET

General Description

c The PowerMESH™II is the evolution of the first u generation of MESH OVERLAY™.

area figure of merit while keeping the device P at the leading edge for what concerns swithing te speed, gate charge and ruggedness.

Key Features

  • Type IRF730 VDSS 400V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF730 N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET General features Type IRF730 VDSS 400V RDS(on) <1Ω ID 5.5A ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge t(s) Description c The PowerMESH™II is the evolution of the first u generation of MESH OVERLAY™. The layout d refinements introduced greatly improve the ro Ron*area figure of merit while keeping the device P at the leading edge for what concerns swithing te speed, gate charge and ruggedness. ole Applications bs ■ Switching application 3 2 1 TO-220 Internal schematic diagram te Product(s) - O Order codes olePart number Obs IRF730 Marking IRF730 Package TO-220 Packaging Tube June 2006 Rev 4 1/12 www.st.com 12 Contents Contents IRF730 1 Electrical ratings . . . . . . . . .