IRF7309QPBF - Power MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRF7309QPBF
Manufacturer	International Rectifier (now Infineon)
File Size	729.05 KB
Description	Power MOSFET
Datasheet	IRF7309QPBF Datasheet

General Description

These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area.

Overview

PD - 96135A l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l.

Key Features

of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of.

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