IRF7309QPBF
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- Low Stray Inductance
- Ground Plane
- Low Leakage Inductance Current Transformer + - -+
- dv/dt controlled by RG
- ISD controlled by Duty Factor "D"
- D.U.T. - Device Under Test + -
- Reverse Polarity for P-Channel
- Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Inductor Curent Forward Drop Ripple ≤ 5% VDD ISD
- VGS = 5.0V for Logic Level and 3V Drive Devices
