Kexin Electronics IRF730S
N-Channel MOSFET
| Part No. | IRF730S |
|---|---|
| Datasheet | IRF730S Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) =400V● ID = 5.5 A (VGS = 10V)
● RDS(ON) ＜ 1Ω (VGS = 10V)
● Fast switching
● Low thermal resistance d g s
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Tc = 25℃ Tc = 100℃ Pulsed Drain Current Avalanche Current Power Dissipation Non-Repetitive Avalanche Energy (Note.1) Tc = 25℃ Ta = 25℃ Repetitive Avalanche Energy (Note.2) Peak Diode Recovery dv/dt Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Ambient (PCB mount) Thermal Resistance Junction to Mounting Base Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM IAR PD EAS EAR dv/dt RthJA RthJB TJ Tstg Note.1: VDD= 50V, starting TJ =25°C, L=16mH, Rg =25Ω, IAS = 5.5 A Note.2: ISD≤5.5 A, dI/dt≤ 90A/μs, VDD≤ V(BR)DSS, TJ≤ 150 °C. Rating 400 ±20 5.5 3.5 22 5.5 74 3.1 290 7.4 4 62 40 1.7 150 -55 to 150 Unit V A W mJ V/ns ℃/W ℃ 1 SMD Type MOSFET N-Channel MOSFET IRF730S (KRF730S)●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Par...
