| Part Number | IRF730S Datasheet |
|---|---|
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a.
* Surface-mount * Available in tape and reel * Dynamic dV/dt rating Available * Repetitive avalanche rated * Fast switching Available * Ease of paralleling * Simple drive requirements * Material categorization: for definitions of compliance please see Note * This . |
IRF730S Datasheet and Specifications PDF
The IRF730S is a Power MOSFET.
Key Specifications
| Package | TO-263-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.83 mm |
| Length | 10.67 mm |
| Width | 9.65 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRF730S Datasheet |
|---|---|
| Description | HEXFET Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | . . |
| Part Number | IRF730S Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
N-Channel MOSFET IRF730S (KRF730S)
MOSFET
■ Features
● VDS (V) =400V ● ID = 5.5 A (VGS = 10V) ● RDS(ON) ＜ 1Ω (VGS = 10V) ● Fast switching ● Low thermal resistance
d
g
s
■ Absolute Maximum.
* VDS (V) =400V * ID = 5.5 A (VGS = 10V) * RDS(ON) ＜ 1Ω (VGS = 10V) * Fast switching * Low thermal resistance d g s * Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Tc = 25℃ Tc = 100℃ Pulsed Drain Current Avalanche Current Power . |