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IRF7309 - HEXFET Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

Overview

PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast.

Key Features

  • ms 153 IRF7309 P-Channel Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform N- and P-Channel 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM t SINGLE PULSE (.