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IRF730 Datasheet PDF

NXP Semiconductors IRF730

The IRF730 is supplied in the SOT78 (TO220AB) conventional leaded package.
Part No. IRF730
Datasheet IRF730 Download
Manufacturer
NXP Semiconductors
Description PowerMOS transistor
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IRF730 datasheet page 1 preview

FEATURES

● Repetitive Avalanche Rated
● Fast switching
● High thermal cycling performance
● Low thermal resistance g IRF730 SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 7.2 A RDS(ON) ≤ 1 Ω s

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. PINNING PIN 1 2 3 tab gate drain source drain

DESCRIPTION

SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX.
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