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IRF730FI - N-Channel Mosfet Transistor

General Description

Drain Current ID=3.5A@ TC=25℃ Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especial

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3.5 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max.