Datasheet Details
| Part number | IRF730FI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.01 KB |
| Description | N-Channel Mosfet Transistor |
| Datasheet | IRF730FI-InchangeSemiconductor.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | IRF730FI |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 232.01 KB |
| Description | N-Channel Mosfet Transistor |
| Datasheet | IRF730FI-InchangeSemiconductor.pdf |
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·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3.5 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W IRF730FI isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
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