Datasheet Details
| Part number | IRF732 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.21 KB |
| Description | N-Channel Mosfet Transistor |
| Datasheet | IRF732-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.
| Part number | IRF732 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.21 KB |
| Description | N-Channel Mosfet Transistor |
| Datasheet | IRF732-InchangeSemiconductor.pdf |
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·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 400 ±20 V V Drain Current-continuous@ TC=25℃ 4.5 A Total Dissipation@TC=25℃ 75 W Max.
Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website：.iscsemi.cn 1 PDF pdfFactory Pro .fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF732 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
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