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IRF731 - N-Channel Mosfet Transistor

General Description

Drain Current ID=5.5A@ TC=25℃ Drain Source Voltage- : VDSS= 350V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) Fast Switching Speed APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies ,

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF731 DESCRIPTION ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 5.5 A Total Dissipation@TC=25℃ 75 W Max.