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IRF731 Datasheet N-channel MOSFET Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product.

General Description

·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 5.5 A Total Dissipation@TC=25℃ 75 W Max.

Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 1.67 80 ℃/W ℃/W isc website:www.iscsemi.cn 1 PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF731 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

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