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IRF7304PBF - HEXFET Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7304 Generation V Technology
IRF7304QPBF Power MOSFET
IRF7301 Power MOSFET
IRF7301PBF HEXFET Power MOSFET
IRF7303 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF7304PbF HEXFET® Power MOSFET l l l l l l l l PD - 95038 Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.090Ω 6 5 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.