These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniquestoachieveextremelylow on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF730FI | Inchange Semiconductor | N-Channel Mosfet Transistor |
| IRF730 | Fairchild Semiconductor | N-Channel Power MOSFET |
| IRF730A | Inchange Semiconductor | N-Channel MOSFET |
| IRF730A | Nell Power Semiconductor | N-Channel Power MOSFET |
| IRF730PBF | Thinki Semiconductor | N-Channel Type Power MOSFET |
| IRF730 | NXP Semiconductors | PowerMOS transistor |
| IRF730AS | Vishay | Power MOSFET |
| IRF730 | Advanced Power Electronics Corp | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| IRF730 | NTE Electronics | N-Channel MOSFET |
| IRF730S | Kexin Semiconductor | N-Channel MOSFET |
