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International Rectifier Electronic Components Datasheet

IRF7316QPBF Datasheet

Power MOSFET

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l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P- Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-
resistance per silicon area. Additional features
of these HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These benefits combine to make this design an
extremely efficient and reliable device for use in
a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
PD - 96126A
IRF7316QPbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = -30V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.058
Top View
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
Avalanche Current
IAR -2.8
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
EAR
dv/dt
0.20
-5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
www.irf.com
Symbol
RθJA
Limit
62.5
Units
°C/W
1
08/02/10


International Rectifier Electronic Components Datasheet

IRF7316QPBF Datasheet

Power MOSFET

No Preview Available !

IRF7316QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.042 0.058
––– 0.076 0.098
VGS = -10V, ID = -4.9A „
VGS = -4.5V, ID = -3.6A „
VGS(th)
Gate Threshold Voltage
-1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance
––– 7.7 ––– S VDS = -15V, ID = -4.9A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = -20V
––– ––– -100
VGS = 20V
Qg Total Gate Charge
––– 23 34
ID = -4.9A
Qgs Gate-to-Source Charge
––– 3.8 5.7 nC VDS = -15V
Qgd Gate-to-Drain ("Miller") Charge
––– 5.9 8.9
VGS = -10V, See Fig. 10 „
td(on)
Turn-On Delay Time
––– 13 19
VDD = -15V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 13 20
––– 34 51
ns ID = -1.0A
RG = 6.0
tf Fall Time
––– 32 48
RD = 15„
Ciss Input Capacitance
––– 710 –––
VGS = 0V
Coss Output Capacitance
––– 380 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance
––– 180 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min. Typ. Max.
––– ––– -2.5
––– ––– -30
––– -0.78 -1.0
––– 44 66
––– 42 63
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
TJ = 25°C, IF = -1.7A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 35mH
RG = 25, IAS = -2.8A.
… Surface mounted on FR-4 board, t 10sec.
ƒ ISD -2.8A, di/dt 150A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
www.irf.com
2


Part Number IRF7316QPBF
Description Power MOSFET
Maker International Rectifier
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