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PD - 91435C
IRF7311
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated
S1 G1 S2 G2
1
8 7
D1 D1 D2 D2
2
VDSS = 20V RDS(on) = 0.029Ω
3
6
4
5
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7311 Datasheet
