Datasheet4U Logo Datasheet4U.com

IRF7313QPBF - HEXFET Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF731 N-Channel Mosfet Transistor Inchange Semiconductor
IRF731 N-Channel Power MOSFET Fairchild Semiconductor
IRF7319TR MOSFET UMW
IRF7319TRPBF-ML N And P-Channel Enhancement Mode MOSFET MOSLEADER
IRF730 PowerMOS transistor NXP

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7313 HEXFET POWER MOSFET
IRF7313PBF HEXFET Power MOSFET
IRF7311 HEXFET Power MOSFET
IRF7314 HEXFET Power MOSFET
IRF7314PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96125 IRF7313QPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.029Ω 3 4 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.