Datasheet4U Logo Datasheet4U.com

IRF7314PBF - Power MOSFET

General Description

Top View SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol V DS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Condu

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF731 N-Channel Mosfet Transistor Inchange Semiconductor
IRF731 N-Channel Power MOSFET Fairchild Semiconductor
IRF7319TR MOSFET UMW
IRF7319TRPBF-ML N And P-Channel Enhancement Mode MOSFET MOSLEADER
IRF730 PowerMOS transistor NXP

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7314 HEXFET Power MOSFET
IRF7314Q Power MOSFET
IRF7314QPBF Power MOSFET
IRF7311 HEXFET Power MOSFET
IRF7313 HEXFET POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95181 IRF7314PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.058Ω 6 5 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.