Datasheet Details
| Part number | IRF7314PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 218.02 KB |
| Description | Power MOSFET |
| Datasheet | IRF7314PBF_InternationalRectifier.pdf |
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Overview: PD - 95181 IRF7314PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.058Ω 6 5 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
| Part number | IRF7314PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 218.02 KB |
| Description | Power MOSFET |
| Datasheet | IRF7314PBF_InternationalRectifier.pdf |
|
|
|
Top View SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol V DS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range -20 ± 12 -5.3 -4.3 -21 -2.5 2.0 1.3 150 -2.9 0.20 -5.0 -55 to + 150 A W mJ A mJ V/ ns °C Thermal Resistance Ratings Maximum Junction-to-Ambient Parameter Symbol RθJA Limit 62.5 Units °C/W 10/7/04 Free Datasheet http://www.datasheet4u.com/ IRF7314PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V (BR)DSS RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr
| Part Number | Description |
|---|---|
| IRF7314 | HEXFET Power MOSFET |
| IRF7314Q | Power MOSFET |
| IRF7314QPBF | Power MOSFET |
| IRF7311 | HEXFET Power MOSFET |
| IRF7313 | HEXFET POWER MOSFET |
| IRF7313PBF | HEXFET Power MOSFET |
| IRF7313QPBF | HEXFET Power MOSFET |
| IRF7316 | HEXFET POWER MOSFET |
| IRF7316PbF | Power MOSFET |
| IRF7316QPBF | Power MOSFET |