Datasheet Summary
- 96107A
Benefits
- Advanced Process Technology
- ÿDual P-Channel MOSFET
- ÿUltra Low On-Resistance
- ÿ175°C Operating Temperature
- ÿRepetitive Avalanche Allowed up to Tjmax
- ÿLead-Free Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The 175°C rating for the SO-8 package...