Datasheet Details
| Part number | IRF7319TR |
|---|---|
| Manufacturer | UMW |
| File Size | 281.92 KB |
| Description | MOSFET |
| Datasheet | IRF7319TR-UMW.pdf |
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Overview: 1.
| Part number | IRF7319TR |
|---|---|
| Manufacturer | UMW |
| File Size | 281.92 KB |
| Description | MOSFET |
| Datasheet | IRF7319TR-UMW.pdf |
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The SOP-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
UMW IRF7319TR 30V N-ChanneI MOSFET -30V P-ChanneI MOSFET 2.1Features GenerationVTechnology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free 2.2Features(N-Ch) VDS (V)=30V RDS(ON)=0.029Ω 2.3Features(P-Ch) VDS (V)=-30V RDS(ON)=0.058Ω 3.Pinning information Pin Symbol Description SOP-8 5678 D1 D1 D2 D2 2,4 G GATE 1,3 5,6,7,8 S SOURCE D DRAIN G1 S1 G1 S2 G2 1234 D1 D2 G2 S1 S2 4.Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ê Pulsed Drain Current TA= 25°C TA=70°C Continuous Source Current (Diode Conduction) Symbol VDS VGS ID IDM IS N-Channel 30 ±20 6.5 5.2 30 2.5 P-Channel Units -30 V ±20 V -4.9 A -3.9 A -30 A -2.5 A UTD Semiconductor Co.,Limited www.umw-ic.com Nov.2024 1 of 11 www.umw-ic.com UMW IRF7319TR 30V N-ChanneI MOSFET -30V P-ChanneI MOSFET Maximum Power Dissipation ê TA= 25°C TA=70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ç Junction and Storage Temperature Range PD EAS IAR EAR dv/dt TJ, TSTG 2 1.3 82 4 0.2 5 -55 to 150 2 1.3 140 -2.8 0.2 -5 -55 to 150 W W mJ A mJ V/ns °C 5.Thermal Characteristics Parameter Maximum Junction-to-Ambient ê Symbol RθJA Max.
62.5 Units °C/W 2 of 11 UTD Semiconductor Co.,Limited Nov.2024 www.umw-ic.com UMW IRF7319TR 30V N-ChanneI MOSFET -30V P-ChanneI MOSFET 6.Electrical Characteristics TJ=25°C Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp Coefficient Current Static Drain-to-Source On-Resistance Symbol V(BR)DSS ΔV(BR)DSS ΔTJ RDS(ON) Gate Threshold Voltage Forward Transconductance VGS(th) gfs Drain-to-Source Leakage Current IDSS Gate-to-Source ForwardLeakage IGSS Total Gate Charge Qg Gate-t
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| MOSLEADER | IRF7319TRPBF-ML | N And P-Channel Enhancement Mode MOSFET | MOSLEADER |
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IRF7319 | HEXFET Power MOSFET | International Rectifier |
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IRF7319PBF | Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
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| IRFL024ZTR | 55V N-ChanneI MOSFET |
| IRFR8314TR | 30V N-Channel MOSFET |