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IRF7317 - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 6 800 600 4 400 C rs s 2 200 0 1 10 100 A 0 0 5 10 15 20 25 30 A - -V D S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (.

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Full PDF Text Transcription

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PD - 9.1568B PRELIMINARY l l l l l IRF7317 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 P -C H AN N E L MO S FET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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