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IRF7314Q - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -93945A IRF7314Q HEXFET® Power MOSFET Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature • Repetitive Avalanche Allowed up to Tjmax • Automotive [Q101] Qualified Description Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.