.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capabil.

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are we.

IRF7325

IRF732

IRF7321D2

IRF7321D2PBF

IRF7322D1PBF

IRF7324

IRF7324D1

IRF7324D1PbF

IRF7324PBF

IRF7324TRPBF-1

IRF7326D2

IRF7326D2PBF

IRF7328