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IRF7325 - HEXFET Power MOSFET

General Description

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription for IRF7325 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7325. For precise diagrams, and layout, please refer to the original PDF.

PD- 94094 IRF7325 HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance q Dual P-Channel MOSFET q Low Profile (<1.8mm) q Available in Tape & Reel q q VDSS -12V R...

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SFET q Low Profile (<1.8mm) q Available in Tape & Reel q q VDSS -12V RDS(on) max (mΩ) 24@VGS = -4.5V 33@VGS = -2.5V 49@VGS = -1.8V ID ±7.8A ±6.2A ±3.9A Description New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.