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IRF7325 - HEXFET Power MOSFET

Description

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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PD- 94094 IRF7325 HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance q Dual P-Channel MOSFET q Low Profile (<1.8mm) q Available in Tape & Reel q q VDSS -12V RDS(on) max (mΩ) 24@VGS = -4.5V 33@VGS = -2.5V 49@VGS = -1.8V ID ±7.8A ±6.2A ±3.9A Description New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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