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IRF7325PBF - HEXFET Power MOSFET

General Description

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • ct to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription for IRF7325PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF7325PBF. For precise diagrams, and layout, please refer to the original PDF.

PD- 95721 IRF7325PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free Descript...

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OSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free Description New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

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