IRF7324D1 Datasheet | International Rectifier

.. PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint FETKY™ MOSFET / Schottky Diode l l l l VDSS = -20V RDS(on) = 0.18Ω Schottky Vf = 0.39V T op V ie w Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. bining this technology with International Rectifier's low forward drop Schottky...