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IRF7324D1PbF - FETKY MOSFET / Schottky Diode

General Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • -481 & EIA-541. 330.00 (12.992) MAX. NOTES : 1.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7324D1 FETKY MOSFET / Schottky Diode
IRF7324 Power MOSFET
IRF7324PBF HEXFET Power MOSFET
IRF7324TRPBF-1 Power MOSFET
IRF7321D2 FETKY MOSFET & Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-95309A IRF7324D1PbF FETKYä MOSFET / Schottky Diode l Co-packaged HEXFET® Power MOSFET and Schottky Diode l Ideal for Mobile Phone Applications l Generation V Technology l SO-8 Footprint l Lead-Free A1 A2 S3 G4 8K 7K 6D 5D Description Top View The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. VDSS = -20V RDS(on) = 0.27Ω Schottky Vf = 0.