IRF7328 Datasheet | International Rectifier

PD -94000 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS(on) max 21mΩ@VGS = -10V 32mΩ@VGS = -4.5V -8.0A -6.8A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S1 G1 S2 G2 1 8 D1 D1 D2 D2 T o p V ie...