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IRF7328PBF - Power MOSFET

General Description

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿAvailable in Tape & Reel lÿ Lead-Free VDSS -30V PD - 95196A IRF7328PbF HEXFET® Power MOSFET RDS(on) max 21mΩ@VGS = -10V 32mΩ@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.