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IRF7324PBF Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 95460 IRF7324PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1mm) ● Available in Tape & Reel ● 2.5V Rated ● Lead-Free ● ● S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -20V RDS(on) = 0.

General Description

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.

IRF7324PBF Distributor