Datasheet Details
| Part number | IRF7328 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 134.60 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF7328 Download (PDF) |
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| Part number | IRF7328 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 134.60 KB |
| Description | HEXFET Power MOSFET |
| Download | IRF7328 Download (PDF) |
|
|
|
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 T o p V ie w SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS(on) max 21mΩ@VGS = -10V 32mΩ@VGS = -4.5V ID -8.0A -6.
| Part Number | Description |
|---|---|
| IRF7328PBF | Power MOSFET |
| IRF7321D2 | FETKY MOSFET & Schottky Diode |
| IRF7321D2PBF | FETKY MOSFET & Schottky Diode |
| IRF7322D1PBF | FETKY MOSFET / Schottky Diode |
| IRF7324 | Power MOSFET |
| IRF7324D1 | FETKY MOSFET / Schottky Diode |
| IRF7324D1PbF | FETKY MOSFET / Schottky Diode |
| IRF7324PBF | HEXFET Power MOSFET |
| IRF7324TRPBF-1 | Power MOSFET |
| IRF7325 | HEXFET Power MOSFET |