Datasheet4U Logo Datasheet4U.com

IRF7329PBF Datasheet HEXFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.DataSheet4U.com The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Overview

PD - 95042 IRF7329PbF HEXFET® Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V ID ±9.2A ±7.4A ±4.

Key Features

  • NE.