Datasheet4U Logo Datasheet4U.com

IRF7329 - HEXFET Power MOSFET

Description

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

📥 Download Datasheet

Datasheet preview – IRF7329

📁 Similar Datasheet

  • IRF732 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF732 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF730 - PowerMOS transistor (NXP)
  • IRF730 - N-Channel Power MOSFET (STMicroelectronics)
  • IRF730 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF730 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF730 - N-Channel MOSFET (NTE)
  • IRF730 - Power MOSFET (Vishay)
  • IRF730 - N-Channel Power MOSFET (nELL)
  • IRF730 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD- 94095A HEXFET® Power MOSFET l l l l l IRF7329 ID ±9.2A ±7.4A ±4.6A Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V New P-Channel HEXFET Ò power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Description S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.DataSheet4U.
Published: |