IRF7329 Datasheet | International Rectifier

PD- 94095A HEXFET® Power MOSFET l l l l l ±9.2A ±7.4A ±4.6A Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V New P-Channel HEXFET Ò power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Description S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6...