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IRF7329PBF - HEXFET Power MOSFET

Description

New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

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PD - 95042 IRF7329PbF HEXFET® Power MOSFET l l l l l l Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max (mW) 17@VGS = -4.5V 21@VGS = -2.5V 30@VGS = -1.8V ID ±9.2A ±7.4A ±4.6A Description New P-Channel HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.DataSheet4U.
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