Datasheet Details
| Part number | IRF7331PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 155.30 KB |
| Description | HEXFET Power MOSFET |
| Download |
IRF7331PbF Download (PDF)
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| Part number | IRF7331PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 155.30 KB |
| Description | HEXFET Power MOSFET |
| Download |
IRF7331PbF Download (PDF)
|
|
|
|
S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 3 6 4 5 Top View SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
20 7.0 5.5 28 2.0 1.3 16 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ.
––– ––– Max.
PD - 95266 IRF7331PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 30@VGS = 4.5V 45@VGS = 2.5V ID 7.0A 5.6A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
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