IRF7338 Datasheet | International Rectifier

- 94372C HEXFET® Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 7 D1 D1 N-Ch VDSS 12V P-Ch -12V D2 D2 P-CHANNEL MOSFET RDS(on) 0.034Ω 0.150Ω Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die...