Datasheet Details
| Part number | IRF7331PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 155.30 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF7331PbF_InternationalRectifier.pdf |
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Overview: PD - 95266 IRF7331PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 30@VGS = 4.5V 45@VGS = 2.5V ID 7.0A 5.6A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
| Part number | IRF7331PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 155.30 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRF7331PbF_InternationalRectifier.pdf |
|
|
|
S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 3 6 4 5 Top View SO-8 ..
Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
20 7.0 5.5 28 2.0 1.3 16 ± 12 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ.
| Part Number | Description |
|---|---|
| IRF7331PbF-1 | HEXFET Power MOSFET |
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