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IRF7331PbF - HEXFET Power MOSFET

General Description

S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 3 6 4 5 Top View SO-8 www.DataSheet4U.com Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Puls

Key Features

  • nsas St. , El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. irf. com for sales contact information.05/04 www. irf. com 9.

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PD - 95266 IRF7331PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS 20V RDS(on) max (mW) 30@VGS = 4.5V 45@VGS = 2.5V ID 7.0A 5.6A These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.