Datasheet Details
| Part number | IRF7343PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 222.41 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRF7343PBF Datasheet
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| Part number | IRF7343PBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 222.41 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
IRF7343PBF Datasheet
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| HUAXUANYANG | IRF7343TRPBF | Dual N+P-Channel Enhancement Mode MOSFET | HUAXUANYANG |
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IRF7343TRPBF | Dual-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| IRF7343 | HEXFET Power MOSFET |
| IRF7343QPbF | Power MOSFET |
| IRF7341 | HEXFET Power MOSFET |
| IRF7341GPBF | Power MOSFET |
| IRF7341PBF | HEXFET Power MOSFET |
| IRF7341Q | HEXFET Power MOSFET |
| IRF7341QPbF | Power MOSFET |
| IRF7342 | Power MOSFET |
| IRF7342D2 | MOSFET & Schottky Diode |
| IRF7342D2PBF | MOSFET & Schottky Diode |