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IRF7410GPbF - HEXFET Power MOSFET

Description

These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

Features

  • 1. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1.

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Full PDF Text Transcription

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PD - 96247 IRF7410GPbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V ID -16A -13.6A -11.5A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
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