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IRF7410GPbF - HEXFET Power MOSFET

General Description

These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

Key Features

  • 1. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7410 HEXFET Power MOSFET
IRF7410PBF HEXFET Power MOSFET
IRF7410PBF-1 Power MOSFET
IRF7410TRPBF-1 Power MOSFET
IRF7413 Power MOSFET
IRF7413A Power MOSFET
IRF7413PBF HEXFET Power MOSFET
IRF7413PBF-1 Power MOSFET
IRF7413Z HEXFET Power MOSFET
IRF7413ZPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96247 IRF7410GPbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max 7mΩ@VGS = -4.5V 9mΩ@VGS = -2.5V 13mΩ@VGS = -1.8V ID -16A -13.6A -11.5A Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.