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IRF7421D1 Datasheet MOSFET & Schottky Diode

Manufacturer: International Rectifier (now Infineon)

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General Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.

Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.

Overview

www.DataSheet4U.com PD 9.1411 PRELIMINARY l l l l IRF7421D1 MOSFET & Schottky Diode 8 Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint HEXFET ® FETKY T M A S S G 1 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.

Key Features

  • 05 32 .00 40 .01 4 .0075 .189 .15 0 M AX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM ET ER S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 MA X 1. 75 0. 25 0. 46 0.25 4.98 3. 99 A 6 5 H 0 . 2 5 ( .0 1 0 ) M A M 5 8 E -A - 7 A1 B C D E e e1 H A 1 2 3 4 e 6X e1 θ K x 45 ° .05 0 BA SIC .02 5 BA SIC .2284 .01 1 0.16 0° .2 440 .019 .050 8° 1.27 BA SIC 0 .635 BA SIC 5 .80 0 .28 0 .41 0° 6.20 0. 48 1.2 7 8° K 0 . 1 0 (.0 0 4 ) L 8X 6 C 8X -C B 8X 0 .2 5 (. 0 1 0 ) M A1 C A S B S L θ R E.

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